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savantic semiconductor product specification silicon npn power transistors 2SC4589 d escription with to-3pfm package high breakdown voltage high speed switching applications for color tv display horizontal deflection output applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(tc=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 5 v i c collector current 10 a i c( surge ) collector surge current 20 a i b base current 0.6 a p c collector power dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pfm) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC4589 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br )ceo collector-emitter breakdown voltage i c =10ma; r be = : 800 v v (br )ebo emitter-base breakdown voltage i e =10ma; i c =0 5 v v cesat collector-emitter saturation voltage i c =8a; i b =1.6 a 5.0 v v besat base-emitter saturation voltage i c =8a; i b =1.6 a 1.5 v i ces collector cut-off current v ce =1500v;r be =0 500 a i ebo emitter cut-off current v eb =5v; i c =0 100 a h fe dc current gain i c =1a ; v ce =5v 8 38 t f fall time i cp =7a; i b1 =1.4a 0.2 0.5 s
savantic semiconductor product specification 3 silicon npn power transistors 2SC4589 package outline fig.2 outline dimensions

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